ECE 482
Fall 2013 All Classes
All Classes
Credit: 3 hours.
Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters.
Section Status updates every 10 minutes.
| CRN | Type | Section | Time | Day | Location | Instructor | Section Details | |
|---|---|---|---|---|---|---|---|---|
|
29966
|
Discussion/
Recitation |
G
|
3:00PM
-3:50PM
|
MWF
|
165 Everitt Laboratory
|
Rosenbaum, E
|
|