ECE 583
Fall 2008 All Classes
All Classes
Credit: 4 hours.
A lab course treating the practical aspects of design and testing of nanometer-scale, MOS circuit technology. Emphasis on process integration and the interrelationship between the process flow and device/circuit performance. Experience with state-of-the-art, process and device simulation tools; nanostructure characterization using atomic force and transmission electron microscopies; and capacitance, conductance and scattering parameter measurements used to extract parameters for circuit models.
Section Status updates every 10 minutes.
| CRN | Type | Section | Time | Day | Location | Instructor | Section Details | |
|---|---|---|---|---|---|---|---|---|
|
49973
|
Lecture
|
C
|
11:00AM
-12:20PM
|
TR
|
260 Everitt Laboratory
|
Timp, G
|
|