ECE 583

fall 2008
 
All Classes

Credit: 4 hours.

A lab course treating the practical aspects of design and testing of nanometer-scale, MOS circuit technology. Emphasis on process integration and the interrelationship between the process flow and device/circuit performance. Experience with state-of-the-art, process and device simulation tools; nanostructure characterization using atomic force and transmission electron microscopies; and capacitance, conductance and scattering parameter measurements used to extract parameters for circuit models. Prerequisite: ECE 444; PHYS 485 or PHYS 486.

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Open
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Open (Restricted)
Section Status Open (Restricted)
Unknown
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