ECE 482

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Credit: 3 hours.

Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters.

3 undergraduate hours. 3 graduate hours. Prerequisite: ECE 342.

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