ECE 482

Fall 2012 Part of Term 1

Part of Term 1
Aug 27-Dec 12

Digital IC Design

Credit: 3 hours.

Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters.

Prerequisite: ECE 290 and ECE 342.

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ECE 482 class schedule data for fall 2012
	CRN	Type	Section	Time	Day	Location	Instructor	Section Details
	29966	Discussion/ Recitation	G	3:00PM -3:50PM	MWF	106B1 Engineering Hall	Shanbhag, N	Part of Term: 1 Date Range: 08/27/12-12/12/12