ECE 441

spring 2006
 
All Classes

Credit: 3 hours.

Detailed presentation of advanced concepts such as generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices. Prerequisite: ECE 440.

Closed
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Open
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Pending
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Open (Restricted)
Section Status Open (Restricted)
Unknown
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