ECE 482
Fall 2026 Part of Term 1
Part of Term 1
Aug 24-Dec 9
Aug 24-Dec 9
Credit: 3 hours.
Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters.
3 undergraduate hours. 3 graduate hours. Prerequisite: ECE 342.
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