ECE 585

Spring 2012 Part of Term 1

Part of Term 1
Jan 17-May 2

MOS Device Modeling & Design

Credit: 4 hours.

Techniques for characterizing gate oxide and interface properties and reliability, I-V models for circuit simulation, design for control of short channel effects, silicon-on-insulator, and new device structures.

Prerequisite: ECE 441.

My Favorites

My Schedule

Section Status updates every 10 minutes.

ECE 585 class schedule data for spring 2012
	CRN	Type	Section	Time	Day	Location	Instructor	Section Details
	34009	Lecture	D	12:30PM -1:50PM	TR	Everitt Laboratory	Rosenbaum, E	Part of Term: 1 Date Range: 01/17/12-05/02/12 Credit: 4 hours Restriction(s): Restricted to Graduate - Urbana-Champaign.